60v n-channel mosfet kia semiconductors kia semiconductors kia semiconductors 65n06 1 . description these n-channel enhancement mode power fiel d effect transistors are produced using kia?s proprietary, planar stripe, dmos technology. this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching perform ance, and withstand high energy pulse in the avalanche and commutation mode. these devices are well suited for low voltage applications such as automotive, dc/dc converters, and high efficiency switching for power management in portable and battery operated products. 2 . features ? 65a, 60v, r ds(on) = 0.016? @v gs = 10 v ? low gate charge ( typical 48nc) ? low crss ( typical 32.5pf) ? fast switching ? 100% avalanche tested ? improved dv/dt capability ? 175o maximum junction temperature rating 3. pin configuration pin function 1 gate 2 drain 3 source 4 drain 1 of 7 www.datasheet.net/ datasheet pdf - http://www..co.kr/
60v n-channel mosfet kia semiconductors kia semiconductors kia semiconductors 65n06 4. absolute maximum ratings (t c = 25 oc , unless otherwise specified) parameter symbol rating units drain-source voltage v dss 60 v tc=25 oc 65 a drain current tc=100 oc i d 40 a drain current pulsed (note 1) i dm 260 a gate-source voltage v gss 20 v single pulsed avalanche energy (note 2) e as 650 mj avalanche current (note 1) i ar 65 a repetitive avalanche energy (note 1) e ar 15.0 mj peak diode recovery dv/dt (note 3) dv/dt 7.0 v/ns tc=25 oc 150 w power dissipation derate above 25 oc p d 1.00 w/oc operating and storage temperature range t j , t stg -55 ~ +175 oc maximum lead temperature for soldering purposes,1/8?? from case for 5 seconds t l 300 oc 5. thermal characteristics parameter symbol min max unit thermal resistance,junction-to-case r jc 1.00 oc /w thermal resistance,case-to-sink r cs 0.5 oc /w thermal resistance,junction-to-ambient r ja 62.5 oc /w 2 of 7 www.datasheet.net/ datasheet pdf - http://www..co.kr/
60v n-channel mosfet kia semiconductors kia semiconductors kia semiconductors 65n06 6 . electrical characteristics (t j =25 c,unless otherwise notes) parameter symbol conditions min typ max unit off characteristics drain-source breakdown voltage bv dss v gs =0v,i d =250 a 60 v breakdown voltage temperature coefficient bv dss / t j i d =250 a, referenced to 25 oc 0.07 v/oc v ds =60v ,v gs =0v 1 a zero gate voltage drain current i dss v ds =48v ,t c =150oc 10 a forward i gssf v gs =20v,v ds =0v 100 na gate-body leakage current reverse i gssr v gs =-20v,v ds =0v -100 na on characteristics gate threshold voltage v gs(th) v ds =v gs , i d =250 a 2.0 4.0 v static drain-source on-resistance r ds(on) v gs =10v,i d =39a 0.015 0.016 ? forward transconductance g fs v ds =25v, i d =32.5a (note4) 100 s dynamic characteristics input capacitance c iss 2000 pf output capacitance c oss 450 pf reverse transfer capacitance c rss v ds =25v,v gs =0v,f=1.0mhz 32.5 pf switching characteristics turn-on delay time t d(on) 12 ns turn-on rise time t r 33 ns turn-off delay time t d(off) 41 ns turn-off fall time t f v dd =30v,i d =39a,r g =4.7 ? r d =0.77 ? ,v gs =10v (note4,5) 12 ns total gate charge q g 40 nc gate-source charge q gs 8 nc gate-drain charge q gd v ds =30v, i d =39a,v gs =10v, (note4,5) 12 nc drain-source diode characteristics and maximum rating maximum continuous drain-source diode forward current i s 65 a maximum pulsed drain-source diode forward current i sm 260 a drain-source diode forward voltage v sd v gs =0v,i s =65a 1.5 v reverse recovery time t rr 60 ns reverse recovery charge q rr v gs =0v,i s =65a di f /dt=100a/ s (note4) 100 c note:1.repetitive rating:pulse width lim ited by maximum junction temperature 2.l=180 h,i as =65a,v dd =25v,r g =25? ,staring t j =25oc 3.i sd < 65a,di/dt < 100a/ s,v dd < bv dss ,staring t j =25 oc 4.pulse test:pulse width < 300 s,duty cycle < 2% 5.essentially independent of operating temperature 3 of 7 www.datasheet.net/ datasheet pdf - http://www..co.kr/
60v n-channel mosfet kia semiconductors kia semiconductors kia semiconductors 65n06 7 . test circuits and waveforms 4 of 7 www.datasheet.net/ datasheet pdf - http://www..co.kr/
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